Dual metal gate electrodes economics essay

Carbon is incorporated into the film either from photoresist decomposition during the etching process or from the etching chemistry [38]. Figure 6.2-10a shows a cross-sectional scanning electron microscope (SEM) image of a polysilicon gate after etching but before stripping and cleaning.

This introduces an internal node “ge.” The gate electrode resistor (Rgeltd) is placed between the external “g” node and the internal “ge” node. The gate electrode resistance model takes into account the number of gate contacts, NGCON. NGCON = 1 indicates single-sided contact; NGCON = 2 indicates double-sided contact.

Gate electrodes needed to exploit the field effect for tuning a graphene nanostructure in situ have been either realized by using a highly doped silicon substrate isolated from the graphene sheet by a layer of SiO22, by depositing a dielectric insulator and a metal on top of the sheet27,28, or by using in-plane gates made of graphene29,30.

The gate electrode may be composed of polysilicon, a silicide material, or metal composites, such as WN, TiN, or TaN. The specific material (s) used depend upon the desired work function of the gate [26,27] and thus the device type, for example, logic or embedded memory, and the required device electrical parameters.